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Point-of-Use Thermoelectric Chiller Applications

In the mid-1990s, prior to joining LAUDA DR. R. WOBSER GMBH & CO. KG, Noah Precision introduced the Point-of-Use (POU) chiller system. Its modular design concept was quickly embraced by Semiconductor IDM's and recognized as a viable alternative to conventional, compressor-based chillers. This remarkable system, offering a small form factor, low Cost-of-Ownership and Dynamic Temperature Control offered process and equipment engineers a new tool to optimize their temperature sensitive processes.

Today, LAUDA-Noah Temperature Control Systems are installed on more than sixty (60) different applications at over fifty (50) wafer fabs, worldwide.

The information below is categorized by semiconductor process and tool manufacturer. Each table includes an Applications Matrix that shows qulified and commercial processes.  Press the + sign on each line to expand the information for that application.

Applied Materials®
Chambers Platforms Process (Loops) Temp range Typical Temp POU Module
ASP(+) Centura 5200 - Centura 2 & 300mm Strip (Wall) 20 - 80 °C 60°C
DPS DPS II Centura 5200 - Centura 2 & 300mm Si (Cathode) 20 - 60 °C 55°C
DPS DPS II Centura 5200 - Centura 2 & 300mm Si (Wall) 20 - 90 °C 80°C
DPS DPS II Centura 5200 - Centura 2 & 300mm Metal (Cathode) 20 - 60 °C 45°C
DPS DPS II Centura 5200 - Centura 2 & 300mm Metal (Wall) 20 - 90 °C 80°C
DPS DPS II Centura 5200 - Centura 2 & 300mm Nitridation (Cathode) 20 - 60 °C 55°C
DPS DPS II Centura 5200 - Centura 2 & 300mm Nitridation (Wall) 20 - 90 °C 65°C
eMax eMax(CT) Centura 5200 - Centura 2 & 300mm Oxide (Cathode) 0 - 80 °C 20°C
eMax eMax(CT) Centura 5200 - Centura 2 & 300mm Oxide (Liner) 20 - 80 °C 40°C
HART(+) HART 3 Centura 300mm Si-DT (Cathode-Lid) 20 - 80 °C 50 & 75°C
HART(+) HART 3 Centura 300mm Si-DT (Wall) 20 - 80 °C 60°C
HART(+) HART 3 Centura 300mm Si-DT (Cathode-In/Out) 20 - 105 °C 80 & 90°C
HART(+) HART 3 Centura 300mm Si-DT (Wall) 20 - 90 °C 60°C
HeWEB/WxP P5000 - Centura 5200 - Centura 2 Tungsten (Cathode) 20 - 60 °C 20°C
HeWEB/WxP P5000 - Centura 5200 - Centura 2 Tungsten (Wall) 20 - 80 °C 60°C
MxP(+) eMxP+ P5000 - Centura 5200 - Centura 2 Si (Cathode) 10 - 60 °C 40°C
MxP(+) eMxP+ P5000 - Centura 5200 - Centura 2 Si (Wall) 20 - 65 °C 60°C
MxP(+) eMxP+ P5000 - Centura 5200 - Centura 2 Metal (Cathode) 10 - 60 °C 40°C
MxP(+) eMxP+ P5000 - Centura 5200 - Centura 2 Metal (Wall) 20 - 90 °C 60°C
MxP(+) eMxP+ P5000 - Centura 5200 - Centura 2 Oxide (Cathode) 0 - 60 °C 20°C
MxP(+) eMxP+ P5000 - Centura 5200 - Centura 2 Oxide (Wall) 20 - 60 °C 40°C
PVD Endura 5500 - Endura 2 (300mm) Al • TiN (Platen) -20 - 95 °C 20°C
Semitool Raider B S Clean (Chem Tank) 10 - 50 °C 20°C
Semitool Raider B S Clean (IPA Loop) 10 - 50 °C 18°C
Super e Centura 5200 - Centura 2 Oxide (Cathode) -20 - 40 °C 15°C
Super e Centura 5200 - Centura 2 Oxide (Wall) 0 - 60 °C 15°C
Lam Research®
Chambers Platforms Process (Loops) Temp range Typical Temp POU Module
4400 4400XLe™ Standalone - Alliance SI (Upper electrode) 10 - 60 °C 30°C
4400 4400XLe™ Standalone - Alliance SI (Lower electrode) 0 - 40 °C 10°C
4500 4500i 4500XLe™ Standalone - Alliance Oxide (Upper electrode) 10 - 60 °C 30°C
4500 4500i 4500XLe™ Standalone - Alliance Oxide (Lower electrode) -20 - 40 °C 10°C
4700 4700X18™ Standalone - Alliance Metal (Upper electrode) 10 - 80 °C 40°C
4700 4700X18™ Standalone - Alliance Metal (Lower electrode) 0 - 60 °C 20°C
DSiE Standalone - Alliance SI (MEMS) (Lower electrode) 0 - 60 °C 20°C
Exelan ® (HPT/Flex) Alliance - 2300 - 2300 Domino Oxide (Upper electrode) 0 - 40 °C 30°C
Exelan ® (HPT/Flex) Alliance - 2300 - 2300 Domino Oxide (Lower electrode) -10 - 60 °C 20°C
Kiyo / Kiyo 45 2300 - 2300 Domino SI (Lower electrode) -20 - 70 °C 20°C
TCP® 9100 Alliance Oxide (Lower electrode) 0 - 40 °C 10°C
TCP® 9400 Standalone - Alliance Si (Lower electrode) 0 - 60 °C 20°C
TCP® 9600 Standalone - Alliance Metal (Lower electrode) 20 - 70 °C 60°C
Versys (& tunable) 2300 - 2300 Domino SI (Lower electrode) 10 - 80 °C 20°C
Versys (& tunable) 2300 - 2300 Domino Metal (Lower electrode) 20 - 80 °C 60°C
Mattson
Chambers Platforms Process (Loops) Temp range Typical Temp POU Module
ICPsm Aspen II (200mm) Strip Poly (Platen) 40 - 80 °C 60°C
Alpine Aspen III (300mm-BE) Strip Poly (Platen) 20 - 80 °C 25°C
eHighlands Aspen III (300mm-FE) Strip Poly (Platen) 20 - 80 °C 25°C
Novellus
Chambers Platforms Process (Loops) Temp range Typical Temp POU Module
Iridia PEP (200mm) Surface Prep (Platen) 20 - 90 °C 70°C
Sierra Sierra (300mm) Surface Prep (Platen) 20 - 80 °C 60°C
TEL™
Chambers Platforms Process (Loops) Temp range Typical Temp POU Module
DRM Unity® II(e) - Unity® M(e) -TELIUS (SP) Oxide (Bottom electrode) -20 - 70 °C 40°C
DRM Unity® II(e) - Unity® M(e) -TELIUS (SP) DT (Bottom electrode) 20 - 105 °C 90°C
SCCM Unity® II(e) - Unity® M(e) -TELIUS (SP) Poly (Top electrode) 20 - 105 °C 60°C
SCCM Unity® II(e) - Unity® M(e) -TELIUS (SP) Poly (Bottom electrode) -20 - 80 °C 20°C
SCCM Unity® II(e) - Unity® M(e) -TELIUS (SP) Oxide (Top electrode) 20 - 105 °C 60°C
SCCM Unity® II(e) - Unity® M(e) -TELIUS (SP) Oxide (Bottom electrode) -20 - 60 °C 10°C