In the mid-1990s, prior to joining LAUDA DR. R. WOBSER GMBH & CO. KG, Noah Precision introduced the Point-of-Use (POU) chiller system. Its modular design concept was quickly embraced by Semiconductor IDM's and recognized as a viable alternative to conventional, compressor-based chillers. This remarkable system, offering a small form factor, low Cost-of-Ownership and Dynamic Temperature Control offered process and equipment engineers a new tool to optimize their temperature sensitive processes.

Today, LAUDA-Noah Temperature Control Systems are installed on more than sixty (60) different applications at over fifty (50) wafer fabs, worldwide.

The information below is categorized by semiconductor process and tool manufacturer. Each table includes an Applications Matrix that shows qulified and commercial processes.

Applied Materials®
Chambers Platforms Process (Loops) Temp range Typical Temp POU Module(s)
ASP(+) Centura 5200 - Centura 2 & 300mm Strip (Wall) 20 - 80 °C 60°C S2400, 3300
DPS DPS II Centura 5200 - Centura 2 & 300mm Si (Cathode) 20 - 60 °C 55°C 3300
DPS DPS II Centura 5200 - Centura 2 & 300mm Si (Wall) 20 - 90 °C 80°C 3300
DPS DPS II Centura 5200 - Centura 2 & 300mm Metal (Cathode) 20 - 60 °C 45°C 3300
DPS DPS II Centura 5200 - Centura 2 & 300mm Metal (Wall) 20 - 90 °C 80°C 3300
DPS DPS II Centura 5200 - Centura 2 & 300mm Nitridation (Cathode) 20 - 90 °C 80°C 3300
DPS DPS II Centura 5200 - Centura 2 & 300mm Nitridation (Wall) 20 - 90 °C 65°C 3300
eMax eMax(CT) Centura 5200 - Centura 2 & 300mm Oxide (Cathode) 0 - 80 °C 20°C 3300, 3500
eMax eMax(CT) Centura 5200 - Centura 2 & 300mm Oxide (Liner) 20 - 80 °C 40°C 3300
HART(+) HART 3 Centura 300mm Si - Dt (Cathode-Lid) 20 - 80 °C 50 & 75°C 3300, 3500
HART(+) HART 3 Centura 300mm Si - Dt (Wall) 20 - 80 °C 60°C 3300
HART(+) HART 3 Centura 300mm Si - Dt (Cathode-In/Out) 20 - 105 °C 80 & 90°C 3300
HART(+) HART 3 Centura 300mm Si - Dt (Wall) 20 - 90 °C 60°C 3300
HeWEB/WxP P5000 - Centura 5200 - Centura 2 Tungsten (Cathode) 20 - 60 °C 60°C 3300
HeWEB/WxP P5000 - Centura 5200 - Centura 2 Tungsten (Wall) 20 - 80 °C 60°C 3300
MxP(+) eMxP+ P5000 - Centura 5200 - Centura 2 SI (Cathode) 10 - 60 °C 40°C 3300
MxP(+) eMxP+ P5000 - Centura 5200 - Centura 2 Si (Wall) 20 - 65 °C 60°C 3300
MxP(+) eMxP+ P5000 - Centura 5200 - Centura 2 Metal (Cathode) 10 - 60 °C 40°C 3300
MxP(+) eMxP+ P5000 - Centura 5200 - Centura 2 Metal (Wall) 20 - 90 °C 60°C 3300
MxP(+) eMxP+ P5000 - Centura 5200 - Centura 2 Oxide (Cathode) 0 - 60 °C 20°C 3300
MxP(+) eMxP+ P5000 - Centura 5200 - Centura 2 Oxide (Wall) 20 - 60 °C 40°C 3300
PVD Endura 5500 - Endura 2 (300mm) Al • TiN (Platen) -20 - 95 °C 20°C 3300, 3500
Semitool Raider B S Clean (Chem Tank) 10 - 50 °C 20°C 3300, 3500
Semitool Raider B S Clean (IPA Loop) 10 - 50 °C 18°C 3300
Super e Centura 5200 - Centura 2 Oxide (Cathode) -20 - 40 °C 15°C 3300, 3500
Super e Centura 5200 - Centura 2 Oxide (Wall) 0 - 60 °C 15°C 3300

Lam Research®
Chambers Platforms Process (Loops) Temp range Typical Temp POU Module(s)
4400 4400XLe™ Standalone - Alliance SI (Upper electrode) 10 - 60 °C 30°C 3300
4400 4400XLe™ Standalone - Alliance SI (Lower electrode) 10 - 60 °C 30°C 3300
4500 4500i 4500XLe™ Standalone - Alliance Oxide (Upper electrode) 10 - 60 °C 30°C 3300
4500 4500i 4500XLe™ Standalone - Alliance Oxide (Lower electrode) -20 - 40 °C 10°C 3300, 3500
4700 4700X18™ Standalone - Alliance Metal (Upper electrode) 10 - 80 °C 40°C 3300
4700 4700X18™ Standalone - Alliance Metal (Lower electrode) 0 - 60 °C 20°C 3300
DSiE Standalone - Alliance SI (MEMS) (Lower electrode) 0 - 60 °C 20°C 3300
Exelan ® (HPT/Flex) Alliance - 2300 - 2300 Domino Oxide (Upper electrode) 0 - 40 °C 30°C 3300, 3500
Exelan ® (HPT/Flex) Alliance - 2300 - 2300 Domino Oxide (Lower electrode) -10 - 60 °C 20°C 3300, 3500
Kiyo / Kiyo 45 2300 - 2300 Domino SI (Lower electrode) -20 - 70 °C 20°C 3300, 3500
TCP® 9100 Alliance Oxide (Lower electrode) 0 - 40 °C 10°C 3300, 3500
TCP® 9400 Standalone - Alliance Si (Lower electrode) 0 - 60 °C 20°C 3300
TCP® 9600 Standalone - Alliance Metal (Lower electrode) 20 - 70 °C 60°C 3300
Versys (& tunable) 2300 - 2300 Domino SI (Lower electrode) 10 - 80 °C 20°C 3300
Versys (& tunable) 2300 - 2300 Domino Metal (Lower electrode) 20 - 80 °C 60°C 3300

Mattson
Chambers Platforms Process (Loops) Temp range Typical Temp POU Module(s)
ICPsm Aspen II (200mm) Strip Poly (Platen) 40 - 80 °C 60°C 3300
Alpine Aspen III (300mm-BE) Strip (Platen) 20 - 80 °C 25°C 3300
eHighlands Aspen III (300mm-FE) Strip Poly (Platen) 20 - 80 °C 25°C 3300

Novellus
Chambers Platforms Process (Loops) Temp range Typical Temp POU Module(s)
Iridia PEP (200mm) Surface Prep (Platen) 20 - 90 °C 70°C 3300
Sierra Sierra (300mm) Surface Prep (Platen) 20 - 80 °C 60°C 3300

TEL™
Chambers Platforms Process (Loops) Temp range Typical Temp POU Module(s)
DRM Unity® II(e) - Unity® M(e) -TELIUS (SP) Oxide (Bottom electrode) -20 - 70 °C 40°C 3300, 3500
DRM Unity® II(e) - Unity® M(e) -TELIUS (SP) DT (Bottom electrode) 20 - 105 °C 90°C 3300
SCCM Unity® II(e) - Unity® M(e) -TELIUS (SP) Poly (Top electrode) 20 - 105 °C 60°C 3300
SCCM Unity® II(e) - Unity® M(e) -TELIUS (SP) Poly (Bottom electrode) -20 - 80 °C 20°C 3300, 3500
SCCM Unity® II(e) - Unity® M(e) -TELIUS (SP) Oxide (Top electrode) 20 - 105 °C 60°C 3300
SCCM Unity® II(e) - Unity® M(e) -TELIUS (SP) Oxide (Bottom electrode) -20 -60 °C 10°C 3300, 3500